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 KSC3502
KSC3502
CRT Display, Video Output
* High Voltage : VCEO=200V * Low Reverse Transfer Capacitance: Cre=1.2pF @ VCB=30V
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) Junction Temperature Storage Temperature Value 200 200 5 100 200 5 1.2 150 - 55 ~ 150 Units V V V mA mA W W C C
Electrical Characteristics TC=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Cre Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Reverse Transfer Capacitance Test Condition IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCB = 150V, IE = 0 VEB = 4V, IC = 0 VCE = 10V, IC = 10mA IC = 20mA, IB = 2mA IC = 20mA, IB = 2mA VCE = 30V, IC = 10mA VCB = 30V, f= 1MHz VCB = 30V, f= 1MHz 150 1.7 1.2 40 Min. 200 200 5 0.1 0.1 320 0.6 1 V V MHz pF pF Typ. Max. Units V V V A A
hFE Classification
Classification hFE C 40 ~ 80 D 60 ~ 120 E 100 ~ 200 F 160 ~ 320
(c)2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC3502
Typical Characteristics
20
10
IB = 160A
IB = 80A
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
IB = 140A
16
8
IB = 120A
12
IB = 70A IB = 60A IB = 50A IB = 40A
IB = 100A IB = 80A
6
8
IB = 60A IB = 40A
4
IB = 30A IB = 20A
4
2
IB = 20A
IB = 0
0 0 2 4 6 8 10
IB = 10A
IB = 0
0 0 20 40 60 80 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
10
VCE = 10V
IC = 10 IB
hFE, DC CURRENT GAIN
100
1
V BE(sat)
10
0.1
VCE (sat)
1 0.1
1
10
100
1000
0.01 0.1
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
160
100
VCE = 10V
140
f = 1MHz
IC[mA], COLLECTOR CURRENT
Cob[pF], CAPACITANCE
120
10
100
80
60
1
40
20
0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1 0.1
1
10
100
1000
VBE[V], BASE-EMITTER VOLTAGE
V CB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Collector Output Capacitance
(c)2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC3502
Typical Characteristics (Continued)
100
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
f=1MHz
VCE = 30V
Cre[pF], CAPACITANCE
10
100
1
10
0.1 0.1
1
10
100
1000
1 0.1
1
10
100
1000
VCB[V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 7. Reverse Transfer Capacitance
Figure 8. Current Gain Dandwidth Product
1000
8
7
IC[mA], COLLECTOR CURRENT
PC[W], POWER DISSIPATION
IC MAX. (Pulse)
0 50
6
IC MAX.
100
s
5
D C (T
DC
c
(T
a
=
25
1ms 10ms
4
= 25
C)
o
o
C )
Tc
3
10
2
1
Ta
1 1 10 100 1000
0 0 25 50
o
75
100
125
150
175
VCE[V], COLLECTOR-EMITTER VOLTAGE
T[ C], TEMPERATURE
Figure 9. Safe Operating Area
Figure 10. Power Derating
(c)2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC3502
Package Demensions
TO-126
0.10
3.90
8.00 0.30
3.25 0.20
14.20MAX
o3.20 0.10
11.00
0.20
(1.00) 0.75 0.10 1.60 0.10 0.75 0.10
0.30
(0.50) 1.75 0.20
#1 2.28TYP [2.280.20] 2.28TYP [2.280.20]
13.06
16.10
0.20
0.50 -0.05
+0.10
Dimensions in Millimeters
(c)2000 Fairchild Semiconductor International Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM
DISCLAIMER
HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2000 Fairchild Semiconductor International
Rev. E


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